| PART |
Description |
Maker |
| HM66WP18513BP-65 |
9M Flow Through Zero Bus Latency (ZBL) SRAM
|
Renesas Technology / Hitachi Semiconductor
|
| IDT71V2577S75PF IDT71V2577S75PFI IDT71V2577YS75PF |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect
3.3V 256K x 18 Synchronous Flow-Through SRAM w/2.5V I/O
|
IDT[Integrated Device Technology]
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B |
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器，单周期取
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| CY7C1353G CY7C1353G-100AXC CY7C1353G-100AXI CY7C13 |
4-Mbit (256K x 18) Flow-through SRAM with NoBL垄芒 Architecture
4-Mbit (256K x 18) Flow-through SRAM with NoBL?/a> Architecture
4-Mbit (256K x 18) Flow-through SRAM with NoBL?Architecture
|
Cypress Semiconductor
|
| A67L73321 A67L73321E-10 A67L73321E-11 A67L73321E-1 |
256K X 16/18, 128K X 32/36 LVTTL, Flow-through DBA SRAM 256 × 16/1828K的X 32/36 LVTTL，流通过数据库管理员的SRAM
256K X 16/18/ 128K X 32/36 LVTTL/ Flow-through DBA SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| 19074-0004 19080-0003 19075-0014 19079-0011 19075- |
STAR RING KRIMPTITE (SRA-129-08) 1 mm2, BRASS, RING TERMINAL
MULTI-STUD RING INSULKRIMP (B-2006-MSX) 2 mm2, COPPER ALLOY, RING TERMINAL
STAR RING INSUL ON TAPE (SRB-229-06XT) 2 mm2, BRASS, RING TERMINAL
MULTI-STUD RING (C-1006-MS) 6 mm2, COPPER ALLOY, RING TERMINAL
STAR RING INSUL ON TAPE (SRA-229-06XT) 1 mm2, BRASS, RING TERMINAL
STAR RING KRIMPTITE (SRA-129-06) 1 mm2, BRASS, RING TERMINAL
190770005 1 mm2, BRASS, RING TERMINAL
STAR RING (STEEL) INSUL TAPED (SRA-S-229 1 mm2, STEEL, RING TERMINAL
MULTI-STUD KRIMPTITE TAPED (C-1006-MST)
STAR RING (STEEL) ON TAPE (SRB-S-129-10T
190740025
|
Molex, Inc.
Littelfuse, Inc.
MOLEX INC
|
| CY7C1325F-117AC CY7C1325F CY7C1325F-133AC CY7C1325 |
4-Mb (256K x 18) Flow-Through Sync SRAM
|
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1361B CY7C1361B-100AC CY7C1361B-100AI CY7C1361 |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
CYPRESS[Cypress Semiconductor]
|
| MT58L256L36F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
| AS5SS256K36DQ-8.5_XT AS5SS256K36 AS5SS256K36A AS5S |
256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM
|
AUSTIN[Austin Semiconductor]
|
| AS5SS256K18DQ-10_IT AS5SS256K18DQ-10_XT AS5SS256K1 |
256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through
|
Austin Semiconductor
|
